Infineon IKQ75N120CT2XKSA1, Type P-Channel IGBT, 150 A 1.2 kV, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 162-3324
- Mfr. Part No.:
- IKQ75N120CT2XKSA1
- Brand:
- Infineon
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- RS Stock No.:
- 162-3324
- Mfr. Part No.:
- IKQ75N120CT2XKSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 150A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 938W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type P | |
| Pin Count | 3 | |
| Switching Speed | 20kHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | TrenchStop | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Energy Rating | 10.8mJ | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 150A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 938W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type P | ||
Pin Count 3 | ||
Switching Speed 20kHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series TrenchStop | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Energy Rating 10.8mJ | ||
Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode.
High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
20% lower R th(jh) compared to TO-247 3 pin
Extended collector-emitter pin creepage of 4.25 mm
Extended clip creepage due to fully encapsulated front side of the package
Higher system power density – I c increase keeping the same system thermal performance
Lower thermal resistance R th(jh) and improved by ∼15% heat dissipation capability of TO-247PLUS vs TO-247
Higher reliability, extended lifetime of the device
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