STMicroelectronics, Type N-Channel IGBT, 29 A 600 V, 3-Pin TO-220FP, Through Hole

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Subtotal (1 tube of 50 units)*

$130.60

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$150.20

(inc. GST)

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Per Tube*
50 - 200$2.612$130.60
250 +$2.351$117.55

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RS Stock No.:
168-8877
Mfr. Part No.:
STGF10NB60SD
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

29A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

80W

Package Type

TO-220FP

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

3.8μs

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.75V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

150°C

Series

Low Drop

Standards/Approvals

RoHS

Length

30.6mm

Height

10.4mm

Width

4.6 mm

Energy Rating

8mJ

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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