Vishay SI7489DP-T1-E3 IGBT

View all IGBTs
Bulk discount available

Subtotal (1 pack of 5 units)*

$24.79

(exc. GST)

$28.51

(inc. GST)

Add to Basket
Select or type quantity
Being discontinued
  • 30 left, ready to ship from another location
  • Final 2,365 unit(s) shipping from 27 January 2026
Units
Per unit
Per Pack*
5 - 745$4.958$24.79
750 - 1495$4.84$24.20
1500 +$4.766$23.83

*price indicative

Packaging Options:
RS Stock No.:
180-7802
Mfr. Part No.:
SI7489DP-T1-E3
Brand:
Vishay
COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 41mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 83W and continuous drain current of 28A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• New low thermal resistance PowerPAK package with low 1.07mm profile
• Operating temperature ranges between -55°C and 150°C
• PWM optimised
• TrenchFET power MOSFET

Applications


• Adaptor switches
• Battery switches
• Load switches
• Notebook computers

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Halogen-free

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links