STMicroelectronics STGWA50HP65FB2 IGBT, 86 A 650 V, 3-Pin TO-247

View all IGBTs
Bulk discount available

Subtotal (1 tube of 30 units)*

$112.53

(exc. GST)

$129.42

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 570 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 - 30$3.751$112.53
60 - 90$3.658$109.74
120 +$3.602$108.06

*price indicative

RS Stock No.:
204-3943
Mfr. Part No.:
STGWA50HP65FB2
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

86 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

1

Maximum Power Dissipation

272 W

Package Type

TO-247

Channel Type

N

Pin Count

3

Transistor Configuration

Single

COO (Country of Origin):
CN
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Maximum junction temperature of 175°C
Co-packaged protection diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive temperature coefficient

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links