STMicroelectronics STGWA75H65DFB2 IGBT, 115 A 650 V, 3-Pin TO-247
- RS Stock No.:
- 206-7212P
- Mfr. Part No.:
- STGWA75H65DFB2
- Brand:
- STMicroelectronics
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Subtotal 8 units (supplied in a tube)*
$81.20
(exc. GST)
$93.36
(inc. GST)
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In Stock
- 24 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 8 - 14 | $10.15 |
| 16 + | $9.365 |
*price indicative
- RS Stock No.:
- 206-7212P
- Mfr. Part No.:
- STGWA75H65DFB2
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 115 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 357 W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 115 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 357 W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
The STMicroelectronics Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package.
Maximum junction temperature: TJ = 175 °C
Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient