STMicroelectronics, Type N-Channel IGBT, 115 A 650 V, 3-Pin TO-247, Through Hole

This image is representative of the product range

Bulk discount available

Subtotal 8 units (supplied in a tube)*

$81.20

(exc. GST)

$93.36

(inc. GST)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per unit
8 - 14$10.15
16 +$9.365

*price indicative

Packaging Options:
RS Stock No.:
206-7212P
Mfr. Part No.:
STGWA75H65DFB2
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

115A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

357W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Height

5.1mm

Length

15.9mm

Standards/Approvals

RoHS

Series

STG

Width

21.1 mm

Automotive Standard

No

The STMicroelectronics Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package.

Maximum junction temperature: TJ = 175 °C

Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive VCE(sat) temperature coefficient