STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4

View all IGBTs

Subtotal (1 pack of 2 units)*

$33.69

(exc. GST)

$38.744

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 568 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 +$16.845$33.69

*price indicative

Packaging Options:
RS Stock No.:
212-2107
Mfr. Part No.:
STGW100H65FB2-4
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

145 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

441 W

Number of Transistors

1

Package Type

TO247-4

Channel Type

N

Pin Count

4

Transistor Configuration

Single

IGBT


The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.

Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links