Infineon, Type N-Channel Resonant Switching, 80 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6640
- Mfr. Part No.:
- IHW40N120R5XKSA1
- Brand:
- Infineon
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | $5.865 | $175.95 |
| 90 - 120 | $5.699 | $170.97 |
| 150 + | $5.528 | $165.84 |
*price indicative
- RS Stock No.:
- 215-6640
- Mfr. Part No.:
- IHW40N120R5XKSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Resonant Switching | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 394W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 42mm | |
| Series | IHW40N120R5 | |
| Standards/Approvals | Pb-free lead plating, IEC61249-2-21, RoHS, JESD-022 | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Resonant Switching | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 394W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 42mm | ||
Series IHW40N120R5 | ||
Standards/Approvals Pb-free lead plating, IEC61249-2-21, RoHS, JESD-022 | ||
Height 5.21mm | ||
Automotive Standard No | ||
Infineon IHW40N120R5 Series Resonant Switching, 1200V Collector-Emitter Voltage, 80A Continuous Collector Current - IHW40N120R5XKSA1
This resonant switching device is a high-voltage power MOSFET designed for use in demanding switching applications. It operates as an N-channel transistor in a through-hole TO-247 package and is intended for circuits requiring robust current handling and elevated temperature endurance. The component suits designers needing a discrete power transistor for resonant converters and other high-energy switching topologies.
Features and Benefits:
• 1200V blocking capability enables high-voltage system designs
• 80A continuous current supports heavy load handling
• 1.85V VCE(sat) reduces conduction losses at high currents
• ±25V gate-emitter rating allows flexible drive voltages
• 394W power dissipation permits sustained thermal loading
• 80A continuous current supports heavy load handling
• 1.85V VCE(sat) reduces conduction losses at high currents
• ±25V gate-emitter rating allows flexible drive voltages
• 394W power dissipation permits sustained thermal loading
Applications
• Suitable for resonant AC-DC converter stages
• Ideal for high-power inverter output stages
• Used for industrial power supplies with high stress
• Can be used for soft-switching topologies in SMPS
• Suitable for laboratory power electronics test rigs
• Ideal for high-power inverter output stages
• Used for industrial power supplies with high stress
• Can be used for soft-switching topologies in SMPS
• Suitable for laboratory power electronics test rigs
What mounting and pin configuration does it use?
The device is supplied in a TO-247 package with three pins and is intended for through-hole mounting on appropriate copper-backed substrates.
What thermal range can it withstand during operation?
It is rated to operate from -40°C up to 175°C junction temperature for wide thermal margin in harsh environments.
Which standards are referenced for material and board compatibility?
The component conforms to IEC 61249-2-21 laminate guidance and meets RoHS restrictions along with Pb-free lead-plating practices.
How does the gate-emitter limit affect drive circuitry?
The ±25V maximum gate-emitter rating sets the allowable peak gate swing and necessitates gate drivers that keep gate stress within that window.