Infineon IGB50N65S5ATMA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO263

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Subtotal (1 reel of 1000 units)*

$2,576.00

(exc. GST)

$2,962.00

(inc. GST)

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  • 1,000 unit(s) shipping from 15 January 2026
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Per unit
Per Reel*
1000 - 4000$2.576$2,576.00
5000 +$2.319$2,319.00

*price indicative

RS Stock No.:
226-6062
Mfr. Part No.:
IGB50N65S5ATMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

270 W

Number of Transistors

1

Package Type

PG-TO263

Configuration

Single

Channel Type

N

Pin Count

3

Transistor Configuration

Single

The Infineon IGB50N65S is 50 A IGBT with anti-parallel diode with no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.

Very low VCEsat of 1.35 V at 25°C
Maximum junction temperature Tvj 175°C
four times nominal current

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