STMicroelectronics STGYA75H120DF2 IGBT, 150 A 1200 V, 3-Pin Max247, Through Hole

View all IGBTs
Bulk discount available

Subtotal (1 unit)*

$16.57

(exc. GST)

$19.06

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 460 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 4$16.57
5 - 9$16.24
10 - 14$15.91
15 - 19$15.60
20 +$15.30

*price indicative

Packaging Options:
RS Stock No.:
234-8894
Mfr. Part No.:
STGYA75H120DF2
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

750 W

Package Type

Max247

Mounting Type

Through Hole

Pin Count

3

The STMicroelectronics IGBT developed using an advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C
5 μs of short-circuit withstand time
VCE(sat) = 2.1 V (typ.) @ IC = 75 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast recovery antiparallel diode

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links