Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

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Subtotal (1 pack of 2 units)*

$8.84

(exc. GST)

$10.16

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8$4.42$8.84
10 - 98$4.325$8.65
100 - 248$4.225$8.45
250 - 498$4.125$8.25
500 +$4.025$8.05

*price indicative

Packaging Options:
RS Stock No.:
242-0978
Mfr. Part No.:
IGP20N65H5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

42 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

125 W

Number of Transistors

1

Configuration

Single

Package Type

TO-220-3

The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.

Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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