STMicroelectronics IGBT 1200 V, 3-Pin

This image is representative of the product range

View all IGBTs
Bulk discount available
View bulk pricing option

Subtotal (1 tube of 30 units)*

$403.89

(exc. GST)

$464.46

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 270 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Tube*
30 - 30$13.463$403.89
60 - 60$13.141$394.23
90 +$12.826$384.78

*price indicative

RS Stock No.:
244-3194
Mfr. Part No.:
STGYA50H120DF2
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

535W

Pin Count

3

Switching Speed

5μs

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Series

H

Automotive Standard

No

The STMicroelectronics IGBT developed using an advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C

5 μs of short-circuit withstand time

Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A

Tight parameter distribution

Positive VCE(sat) temperature coefficient

Low thermal resistance

Very fast recovery antiparallel diode

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy