MPN

Infineon FS150R12KT3BOSA1 IGBT Module, 200 A 1200 V

RS Stock No.:: 244-5403
Mfr. Part No.:: FS150R12KT3BOSA1
Brand:: Infineon

Infineon FS150R12KT3BOSA1 IGBT Module, 200 A 1200 V

Bulk discount available

Subtotal (1 tray of 10 units)*

$2,357.55

(exc. GST)

$2,711.18

(inc. GST)

FREE delivery for orders over $60.00 ex GST

Temporarily out of stock

Shipping from 22 November 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tray*
10 - 10	$235.755	$2,357.55
20 - 20	$231.04	$2,310.40
30 +	$226.421	$2,264.21

*price indicative

RS Stock No.:: 244-5403
Mfr. Part No.:: FS150R12KT3BOSA1
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	200 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	+/-20V
	Maximum Power Dissipation	700 W
	Number of Transistors	6

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 200 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage +/-20V
	Maximum Power Dissipation 700 W
	Number of Transistors 6

Datasheet - FS150R12KT3BOSA1

The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.15 V, gate threshold voltage is 6.5 V.

Collector-emitter cut-off current 5.0 mA
Temperature under switching conditions 125° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.40 nF

Infineon FS150R12KT3BOSA1 IGBT Module, 200 A 1200 V

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