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Infineon IGBT Module, 200 A 1.2 kV EconoPACKTM3

RS Stock No.:: 244-5404P
Mfr. Part No.:: FS150R12KT3BOSA1
Brand:: Infineon

Infineon IGBT Module, 200 A 1.2 kV EconoPACKTM3

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Subtotal 2 units (supplied in a tray)*

$443.10

(exc. GST)

$509.56

(inc. GST)

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Temporarily out of stock

Shipping from 14 May 2027

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Units	Per unit
2 - 2	$221.55
3 - 3	$217.13
4 - 4	$212.79
5 +	$208.54

*price indicative

RS Stock No.:: 244-5404P
Mfr. Part No.:: FS150R12KT3BOSA1
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current Ic	200A
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1.2kV
	Maximum Power Dissipation Pd	700W
	Number of Transistors	6
	Package Type	EconoPACKTM3
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.15V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	125°C
	Series	FS150R12KT3
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Maximum Continuous Collector Current Ic 200A
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1.2kV
	Maximum Power Dissipation Pd 700W
	Number of Transistors 6
	Package Type EconoPACKTM3
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.15V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 125°C
	Series FS150R12KT3
	Standards/Approvals No
	Automotive Standard No

Datasheet - FS150R12KT3BOSA1

The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.15 V, gate threshold voltage is 6.5 V.

Collector-emitter cut-off current 5.0 mA

Temperature under switching conditions 125° C

Gate-emitter leakage current 400 nA

Reverse transfer capacitance 0.40 nF