onsemi IGBT Module Q0PACK - Case 180AJ, Surface

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Subtotal (1 tray of 24 units)*

$3,464.376

(exc. GST)

$3,984.024

(inc. GST)

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  • Shipping from 15 October 2026
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Units
Per unit
Per Tray*
24 - 24$144.349$3,464.38
48 - 48$143.613$3,446.71
72 +$143.122$3,434.93

*price indicative

RS Stock No.:
245-6981
Mfr. Part No.:
NXH40B120MNQ0SNG
Brand:
onsemi
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Brand

onsemi

Product Type

IGBT Module

Maximum Power Dissipation Pd

118W

Number of Transistors

2

Package Type

Q0PACK - Case 180AJ

Mount Type

Surface

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Height

13.9mm

Standards/Approvals

RoHS

Length

55.2mm

Series

NXH40B120MNQ0SNG

Automotive Standard

No

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel Plated DBC


The ON Semiconductor 3 Channel Boost Q1 Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V 40 m SiC MOSFETs

Low Reverse Recovery and Fast Switching SiC Diodes

1200 V Bypass and Anti parallel Diodes

Low Inductive Layout Solderable Pins Thermistor

This Device is Pb Free, Halogen Free/BFR Free and is RoHS Compliant

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