Bourns BIDD05N60T Single Diode IGBT, 5 A 600 V TO-252

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Subtotal (1 pack of 5 units)*

$16.65

(exc. GST)

$19.15

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45$3.33$16.65
50 - 95$2.852$14.26
100 - 245$2.33$11.65
250 - 995$2.286$11.43
1000 +$1.922$9.61

*price indicative

Packaging Options:
RS Stock No.:
253-3500
Mfr. Part No.:
BIDD05N60T
Brand:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current

5 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

82 W

Configuration

Single Diode

Package Type

TO-252

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure improves the robustness of the device.

600V, 5A, Low VCE(sat)
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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