Infineon IGBT Module, 4.7 A TO-263
- RS Stock No.:
- 258-3756
- Mfr. Part No.:
- IMBG120R350M1HXTMA1
- Brand:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 1000 units)*
$4,426.00
(exc. GST)
$5,090.00
(inc. GST)
Spend over $80.00 ex GST for FREE delivery
Temporarily out of stock
- Shipping from 28 September 2027
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | $4.426 | $4,426.00 |
| 2000 - 2000 | $3.984 | $3,984.00 |
| 3000 + | $3.585 | $3,585.00 |
*price indicative
- RS Stock No.:
- 258-3756
- Mfr. Part No.:
- IMBG120R350M1HXTMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 4.7A | |
| Maximum Power Dissipation Pd | 65W | |
| Package Type | TO-263 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 4.7A | ||
Maximum Power Dissipation Pd 65W | ||
Package Type TO-263 | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Very low switching losses
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density