IXYS, N-Channel high Speed IGBT, 40 A 1.2 kV, 3-Pin TO-220, Through Hole

RS Stock No.:: 808-0243P
Mfr. Part No.:: IXYP20N120C3
Brand:: IXYS

IXYS, N-Channel high Speed IGBT, 40 A 1.2 kV, 3-Pin TO-220, Through Hole

This image is representative of the product range

Subtotal 2 units (supplied in a tube)*

$25.77

(exc. GST)

$29.64

(inc. GST)

Spend over $80.00 ex GST for FREE delivery

Temporarily out of stock

28 left, ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
2 +	$12.885

*price indicative

RS Stock No.:: 808-0243P
Mfr. Part No.:: IXYP20N120C3
Brand:: IXYS

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	IXYS
	Product Type	high Speed IGBT
	Maximum Continuous Collector Current Ic	40A
	Maximum Collector Emitter Voltage Vceo	1.2kV
	Maximum Power Dissipation Pd	278W
	Package Type	TO-220
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Switching Speed	50kHz
	Maximum Collector Emitter Saturation Voltage VceSAT	4V
	Minimum Operating Temperature	-55°C
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Operating Temperature	175°C
	Series	GenX3TM IGBTs
	Standards/Approvals	International Standard Packages
	Automotive Standard	No

	Select all
	Brand IXYS
	Product Type high Speed IGBT
	Maximum Continuous Collector Current Ic 40A
	Maximum Collector Emitter Voltage Vceo 1.2kV
	Maximum Power Dissipation Pd 278W
	Package Type TO-220
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Switching Speed 50kHz
	Maximum Collector Emitter Saturation Voltage VceSAT 4V
	Minimum Operating Temperature -55°C
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Operating Temperature 175°C
	Series GenX3TM IGBTs
	Standards/Approvals International Standard Packages
	Automotive Standard No

IGBT Discretes, IXYS XPT series

The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)

Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage

Short circuit capability for 10usec

Positive on-state voltage temperature coefficient

Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes

International standard and proprietary high voltage packages

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

IXYS, N-Channel high Speed IGBT, 40 A 1.2 kV, 3-Pin TO-220, Through Hole

Spend over $80.00 ex GST for FREE delivery

IGBT Discretes, IXYS XPT series

IGBT Discretes & Modules, IXYS

Related links

Be the first to know about our latest products and offers