Renesas NE3510M04-A N-Channel JFET, 4 V, Idss 42 → 97mA, 4-Pin MO4
- RS Stock No.:
- 772-5911P
- Mfr. Part No.:
- NE3510M04-A
- Brand:
- Renesas Electronics
This image is representative of the product range
Bulk discount available
Subtotal 20 units (supplied in a tube)*
$28.12
(exc. GST)
$32.34
(inc. GST)
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Units | Per unit |
|---|---|
| 20 - 40 | $1.406 |
| 50 - 90 | $1.253 |
| 100 - 190 | $1.09 |
| 200 + | $1.035 |
*price indicative
- RS Stock No.:
- 772-5911P
- Mfr. Part No.:
- NE3510M04-A
- Brand:
- Renesas Electronics
Technical data sheets
Legislation and Compliance
Product Details
- COO (Country of Origin):
- JP
N-Channel HEMT, Renesas
A High-electron-mobility transistor (HEMT, also known as a hetero-structure or hetero-junction FET) is a junction FET utilising two materials with different band gaps (i.e. a hetero-junction) as the channel instead of the doped region used in a MOSFET. HEMT transistors exhibit good high frequency characteristics and are generally used in small-signal low-noise RF applications.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.