STMicroelectronics SuperMESH Type N-Channel MOSFET, 2.4 A, 600 V Enhancement, 3-Pin TO-252 STD3NK60ZT4
- RS Stock No.:
- 151-418P
- Mfr. Part No.:
- STD3NK60ZT4
- Brand:
- STMicroelectronics
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Subtotal 200 units (supplied on a reel)*
$194.20
(exc. GST)
$223.40
(inc. GST)
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In Stock
- 2,420 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 200 - 480 | $0.971 |
| 500 - 980 | $0.90 |
| 1000 - 1980 | $0.829 |
| 2000 + | $0.797 |
*price indicative
- RS Stock No.:
- 151-418P
- Mfr. Part No.:
- STD3NK60ZT4
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | SuperMESH | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 11.8nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.1mm | |
| Standards/Approvals | RoHS | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series SuperMESH | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 11.8nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.1mm | ||
Standards/Approvals RoHS | ||
Height 2.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using the Super MESH technology, an optimization of the well established Power MESH. In addition to a significant reduction in on resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener protected