STMicroelectronics MDmesh II N-Channel MOSFET, 2.2 A, 600 V Enhancement, 8-Pin PowerFLAT (3.3 x 3.3) HV STL3NM60N

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Subtotal 100 units (supplied on a continuous strip)*

$361.80

(exc. GST)

$416.10

(inc. GST)

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  • Plus 4,720 unit(s) shipping from 12 October 2026
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Units
Per unit
100 - 240$3.618
250 - 490$3.352
500 - 990$3.08
1000 +$2.968

*price indicative

Packaging Options:
RS Stock No.:
151-423P
Mfr. Part No.:
STL3NM60N
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerFLAT (3.3 x 3.3) HV

Series

MDmesh II

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

22W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

9.5nC

Maximum Gate Source Voltage Vgs

25V

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MY
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance. It is therefore suitable for the most demanding high efficiency converters.

100% avalanche tested

Low input capacitance and gate charge

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