Infineon HEXFET Dual N/P-Channel MOSFET, 2 A, 2.7 A, 30 V, 8-Pin MSOP IRF7509TRPBF

RS Stock No.:: 301-192
Distrelec Article No.:: 302-84-022
Mfr. Part No.:: IRF7509TRPBF
Brand:: Infineon

Infineon HEXFET Dual N/P-Channel MOSFET, 2 A, 2.7 A, 30 V, 8-Pin MSOP IRF7509TRPBF

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RS Stock No.:: 301-192
Distrelec Article No.:: 302-84-022
Mfr. Part No.:: IRF7509TRPBF
Brand:: Infineon

IRF7509 HEXFET® Power MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2 A, 2.7 A
Maximum Drain Source Voltage	30 V
Package Type	MSOP
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	110 mΩ, 200 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.25 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Length	3mm
Typical Gate Charge @ Vgs	7.5 nC @ 10 V, 7.8 nC @ 10 V
Width	3mm
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Height	0.86mm
Minimum Operating Temperature	-55 °C

Infineon HEXFET Dual N/P-Channel MOSFET, 2 A, 2.7 A, 30 V, 8-Pin MSOP IRF7509TRPBF

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Dual N/P-Channel Power MOSFET, Infineon

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