Infineon CoolSiC N-Channel MOSFET, 7.5 A, 1.7 kV Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R650M1XKSA1

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$28.17

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$32.40

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2 - 18$14.085$28.17-
20 - 198$12.69$25.38$27.90
200 +$11.685$23.37$480.00

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RS Stock No.:
349-110
Mfr. Part No.:
IMWH170R650M1XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7.5A

Maximum Drain Source Voltage Vds

1.7kV

Package Type

PG-TO-247-3-STD-NN4.8

Series

CoolSiC

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

580mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

15V

Maximum Power Dissipation Pd

88W

Typical Gate Charge Qg @ Vgs

8.1nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon CoolSiC 1700 V SiC Trench MOSFET is a high performance silicon carbide MOSFET designed for efficient power switching. It is 12 V / 0 V gate-source voltage compatible, making it suitable for use with most flyback controllers. Featuring a benchmark gate threshold voltage (VGS(th)) of 4.5 V, it ensures reliable and efficient switching performance in a wide range of power applications. This MOSFET is an excellent choice for systems requiring high voltage operation and enhanced energy efficiency.

Very low switching losses

Fully controllable dv/dt for EMI optimization

The .XT interconnection technology for best in class thermal performance

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