Infineon IQF N-Channel Power Transistor, 451 A, 40 V Enhancement, 12-Pin PG-TSON-12 IQFH55N04NM6ATMA1
- RS Stock No.:
- 349-390
- Mfr. Part No.:
- IQFH55N04NM6ATMA1
- Brand:
- Infineon
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- RS Stock No.:
- 349-390
- Mfr. Part No.:
- IQFH55N04NM6ATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 451A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IQF | |
| Package Type | PG-TSON-12 | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.55mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Maximum Power Dissipation Pd | 214W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 451A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IQF | ||
Package Type PG-TSON-12 | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.55mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Maximum Power Dissipation Pd 214W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 40 V is specifically optimized for low voltage drive applications and battery powered systems, making it ideal for energy efficient designs. It is also optimized for synchronous applications, ensuring enhanced performance. The MOSFET features very low on-resistance (RDS(on)), minimizing conduction losses for improved efficiency. Additionally, it is 100% avalanche tested, ensuring reliable performance under demanding conditions.
Superior thermal resistance
N channel
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
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