Infineon IMBG65 Type N-Channel MOSFET, 158 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R010M2H

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$56.56

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$65.04

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1 - 9$56.56
10 - 99$50.90
100 +$46.94

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RS Stock No.:
351-964
Mfr. Part No.:
IMBG65R010M2H
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

158A

Output Power

535W

Maximum Drain Source Voltage Vds

650V

Series

IMBG65

Package Type

PG-TO263-7

Mount Type

Surface

Pin Count

7

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC

Height

4.5mm

Width

9.45 mm

Length

10.2mm

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon CoolSiC MOSFET G2 in a D2PAK-7 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Enables BOM savings

Highest reliability

Enables top efficiency and power density

Ease of use

Full compatibility with existing vendors

Allows designs without fan or heatsink

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