N-Channel MOSFET, 60 A, 250 V, 3-Pin TO-220AB Infineon IRFB4332PBF

RS Stock No.:: 495-562
Mfr. Part No.:: IRFB4332PBF
Brand:: Infineon

N-Channel MOSFET, 60 A, 250 V, 3-Pin TO-220AB Infineon IRFB4332PBF

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RS Stock No.:: 495-562
Mfr. Part No.:: IRFB4332PBF
Brand:: Infineon

Infineon HEXFET Series MOSFET, 60A Maximum Continuous Drain Current, 390W Maximum Power Dissipation - IRFB4332PBF

This MOSFET is tailored for high-performance applications in automation and electronics. Leveraging advanced HEXFET technology, it ensures optimal efficiency and reliability in critical environments. The device features robust specifications combined with a user-friendly design, making it suitable for a range of industrial applications. Its effective operation in rigorous conditions meets the requirements of modern electronic systems.

Features & Benefits

• N-channel configuration supports efficient current flow
• Continuous drain current rating of 60A facilitates strong performance
• High voltage capacity up to 250V enhances versatility
• Low on-resistance increases efficiency and minimises heat generation
• Enhancement mode operation improves stability for digital applications
• High power dissipation capability contributes to reliability under load

Applications

• Applied in energy recovery systems to boost efficiency
• Suitable for pass switch where space is limited
• Utilised in plasma display panels to enhance performance
• Ideal for automation controls demanding sustained high current

What is the temperature range for optimal operation?

The device operates effectively between -40°C and +175°C, allowing it to function in diverse environmental conditions.

How does the gate threshold voltage affect performance?

With a threshold voltage between 3V and 5V, it permits precise control in switching applications.

Can it handle high pulsed currents?

Yes, the design accommodates pulsed drain currents, allowing for 230A under specific conditions, which is advantageous for transient applications.

What are the thermal management requirements?

To maintain optimal performance, adequate cooling measures should be implemented, considering a maximum power dissipation of 390W.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	250 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	33 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	390 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	99 nC @ 10 V
Width	4.82mm
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Length	10.66mm
Height	9.02mm
Minimum Operating Temperature	-40 °C
Forward Diode Voltage	1.3V