Vishay SIRS4300DP Type N-Channel Single MOSFETs, 680 A, 30 V Enhancement, 8-Pin PowerPAK
- RS Stock No.:
- 653-096
- Mfr. Part No.:
- SIRS4300DP-T1-RE3
- Brand:
- Vishay
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- RS Stock No.:
- 653-096
- Mfr. Part No.:
- SIRS4300DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 680A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIRS4300DP | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00040Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Maximum Power Dissipation Pd | 278W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 5.10mm | |
| Length | 6.10mm | |
| Height | 0.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 680A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIRS4300DP | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00040Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Maximum Power Dissipation Pd 278W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 5.10mm | ||
Length 6.10mm | ||
Height 0.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SIRS4300DP Series Single MOSFETs, 30V Maximum Drain Source Voltage, 680A Maximum Continuous Drain Current - SIRS4300DP-T1-RE3
This single MOSFET device is a high-current N-channel power transistor designed for surface-mounted switching and power-conversion tasks. It operates across a wide temperature range and is intended for applications requiring very low conduction losses and substantial continuous current handling. The component is compatible with typical PCB assembly processes and offers gate-driven enhancement-mode control for fast switching.
Features and Benefits:
• Very low Rds(on) 0.0004Ω reduces conduction losses and heat
• Maximum continuous current 680A enables heavy-load switching
• Drain-source voltage 30V supports low-voltage power rails
• Maximum power dissipation 278W allows high-power operation
• Typical gate charge 84nC yields predictable switching energy
• Maximum gate-source voltage 20V protects gate during drive transients
• Maximum continuous current 680A enables heavy-load switching
• Drain-source voltage 30V supports low-voltage power rails
• Maximum power dissipation 278W allows high-power operation
• Typical gate charge 84nC yields predictable switching energy
• Maximum gate-source voltage 20V protects gate during drive transients
Applications
• Suitable for high-current motor-drive stages
• Ideal for synchronous rectification in PSU designs
• Used with battery management and DC-DC converters
• Can be used for server and telecoms power distribution
• Suitable for high-power MOSFET modules in power stacks
• Ideal for synchronous rectification in PSU designs
• Used with battery management and DC-DC converters
• Can be used for server and telecoms power distribution
• Suitable for high-power MOSFET modules in power stacks
What thermal conditions can it tolerate during operation?
It is specified to function from -55°C up to 150°C, enabling use in environments with wide temperature swings while maintaining electrical performance.
What package and mounting type does it use for PCB assembly?
The device comes in a PowerPAK surface-mount package designed for low-profile assembly and efficient thermal contact with PCB copper.
How does the forward voltage affect conduction performance?
The typical forward voltage of 1.1V influences conduction losses during synchronous rectification and body-diode conduction intervals, affecting overall efficiency in low-voltage systems.
What gate-drive constraints must be observed to avoid damage?
The gate must not exceed ±20V relative to the source
keeping the drive within this limit prevents gate-dielectric stress and ensures reliable switching.
Related links
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