STMicroelectronics G-HEMT P-Channel Transistor, 26 A, 700 V Enhancement, 13-Pin TO-LL SGT070R70HTO

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RS Stock No.:
719-630
Mfr. Part No.:
SGT070R70HTO
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Transistor

Channel Type

P-Channel

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-LL

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

13

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-6 to 7 V

Typical Gate Charge Qg @ Vgs

8.5nC

Maximum Power Dissipation Pd

231W

Maximum Operating Temperature

150°C

Width

10.4 mm

Length

10.58mm

Height

2.4mm

COO (Country of Origin):
CN
The STMicroelectronics 700 V 26 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

Enhancement mode normally off transistor

Very high switching speed

High power management capability

Extremely low capacitances

Kelvin source pad for optimum gate driving

Zero reverse recovery charge

ESD safeguard

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