STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

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Subtotal (1 reel of 2500 units)*

$5,457.50

(exc. GST)

$6,275.00

(inc. GST)

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Units
Per unit
Per Reel*
2500 +$2.183$5,457.50

*price indicative

RS Stock No.:
719-637
Mfr. Part No.:
SGT350R70GTK
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

P-Channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Series

G-HEMT

Package Type

TO-252

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-1.4 to 7 V

Maximum Power Dissipation Pd

47W

Typical Gate Charge Qg @ Vgs

1.5nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.2mm

Height

2.4mm

Width

6.7 mm

COO (Country of Origin):
CN
The STMicroelectronics 700 V 6 A e-mode PowerGaN transistor combined with a well-established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultrafast switching operation to enable high-power density and unbeatable efficiency performances. Recommended for consumer QR applications with zero current turn-on.

Enhancement mode normally off transistor

Very high switching speed

High power management capability

Extremely low capacitances

Kelvin source pad for optimum gate driving

Zero reverse recovery charge

ESD safeguard

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