Vishay SiH N channel-Channel MOSFET, 33 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SiHK075N60EF

N
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RS Stock No.:
735-159
Mfr. Part No.:
SiHK075N60EF
Brand:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK 10 x 12

Series

SiH

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.061Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

48nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

192W

Forward Voltage Vf

600V

Maximum Operating Temperature

150°C

Height

2mm

Length

13mm

Standards/Approvals

RoHS

Width

10mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

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