Vishay TrenchFET P-Channel MOSFET, -3.1 A, -20 V Enhancement, 3-Pin SOT-23 SI2301HDS-T1-GE3

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Subtotal (1 unit)*

$0.32

(exc. GST)

$0.37

(inc. GST)

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1 - 24$0.32
25 - 99$0.21
100 - 499$0.16
500 +$0.11

*price indicative

RS Stock No.:
735-212
Mfr. Part No.:
SI2301HDS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

P-Channel

Maximum Continuous Drain Current Id

-3.1A

Maximum Drain Source Voltage Vds

-20V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

0.142Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±8 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

5.5nC

Maximum Power Dissipation Pd

1.6W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
IL

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