Infineon CoolGaN N channel-Channel Power Transistor, 30 A, 650 V Enhancement, 9-Pin PG-HDSOP-16 IGLT65R110B2AUMA1

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RS Stock No.:
762-901
Mfr. Part No.:
IGLT65R110B2AUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N channel

Product Type

Power Transistor

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Series

CoolGaN

Package Type

PG-HDSOP-16

Mount Type

Surface Mount

Pin Count

9

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.61nC

Maximum Power Dissipation Pd

55W

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

-10V

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Height

2.35mm

Width

10.1mm

Standards/Approvals

RoHS Compliant

Length

10.3mm

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon CoolGaN Bi-Directional Switch (BDS) utilizes gallium nitride technology to provide efficient voltage blocking in both directions. It integrates substrate voltage control, simplifying design for various industrial applications. The IGLT65R110B2 model is housed in a TOLT package, optimized for high power density.

Optimized for soft switching operation

Dual‑gate for independent bi‑directional functionality

Superior performance

Versatile for diverse industrial applications

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