Infineon StrongIRFET N channel-Channel Power MOSFET, 119 A, 30 V Enhancement, 3-Pin PG-TO263-3 IPB023N03LF2SATMA1

N

This image is representative of the product range

View all MOSFETs
Bulk discount available
View bulk pricing option

Subtotal (1 unit)*

$3.84

(exc. GST)

$4.42

(inc. GST)

Add to Basket
Select or type quantity

In Stock
  • 800 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
RS Stock No.:
762-990
Mfr. Part No.:
IPB023N03LF2SATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

30V

Package Type

PG-TO263-3

Series

StrongIRFET

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

2.35mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Maximum Power Dissipation Pd

107W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Height

4.83mm

Length

15.88mm

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon StrongIRFET 2 Power Transistor is a 30V N-channel MOSFET suitable for various applications. It operates in extreme conditions, with a maximum temperature rating of 175°C and conforms to environmental regulations.

100% avalanche tested

Pb-free lead plating

RoHS compliant

Halogen-free according to IEC61249-2-21

Related links