STMicroelectronics STH285N10F8-6AG N channel-Channel Power MOSFET, 58 A, 650 V Enhancement Mode, 4-Pin PG-TO-247

N

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$17.71

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1 - 9$15.40
10 - 49$14.93
50 - 99$14.49
100 +$12.47

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RS Stock No.:
800-466
Mfr. Part No.:
STW65N040M9-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

650V

Series

STH285N10F8-6AG

Package Type

PG-TO-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

37mΩ

Channel Mode

Enhancement Mode

Typical Gate Charge Qg @ Vgs

110nC

Maximum Power Dissipation Pd

321W

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

15.9mm

Width

5.1mm

Standards/Approvals

ECOPACK

Height

21.1mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.

Very low FOM (RDS(on)·Qg)

Higher dv/dt capability

Excellent switching performance

Easy to drive

100% avalanche tested

Excellent switching performance thanks to the extra driving source pin

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