Microchip Half Bridge mSiC N-Channel SiC Power Module, 295 A, 3.3 kV Enhancement Mode MSCSM330AM07CD3NG

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$2,131.91

(exc. GST)

$2,451.70

(inc. GST)

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1 +$2,131.91

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RS Stock No.:
854-512
Mfr. Part No.:
MSCSM330AM07CD3NG
Brand:
Microchip
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Brand

Microchip

Channel Type

N

Product Type

SiC Power Module

Maximum Continuous Drain Current Id

295A

Maximum Drain Source Voltage Vds

3.3kV

Series

mSiC

Mount Type

Heatsink

Channel Mode

Enhancement Mode

Maximum Power Dissipation Pd

1918W

Maximum Operating Temperature

175°C

Transistor Configuration

Half Bridge

Standards/Approvals

RoHS

Automotive Standard

No

The Microchip silicon carbide power module excels in high-performance applications, delivering exceptional voltage handling and continuous drain current capabilities for demanding environments.

Robust thermal reliability ensures optimal performance at elevated temperatures

Integrated Schottky diode provides zero reverse recovery, enhancing switching behaviour

Designed with a Kelvin source configuration for simplified gate driving

Compact, isolated package allows direct mounting to heatsinks

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