Vishay SUD50P04-08 Type P-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 SUD50P04-08-GE3
- RS Stock No.:
- 121-9658
- Mfr. Part No.:
- SUD50P04-08-GE3
- Brand:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
$18.84
(exc. GST)
$21.665
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- 6,990 unit(s) shipping from 27 March 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 495 | $3.768 | $18.84 |
| 500 - 995 | $3.676 | $18.38 |
| 1000 + | $3.616 | $18.08 |
*price indicative
- RS Stock No.:
- 121-9658
- Mfr. Part No.:
- SUD50P04-08-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SUD50P04-08 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.8V | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Power Dissipation Pd | 73.5W | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.38mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SUD50P04-08 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.8V | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Power Dissipation Pd 73.5W | ||
Maximum Operating Temperature 150°C | ||
Height 2.38mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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