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onsemi BS170 N-Channel MOSFET, 500 mA, 60 V Enhancement, 3-Pin TO-92

RS Stock No.:: 124-1745
Mfr. Part No.:: BS170
Brand:: onsemi

onsemi BS170 N-Channel MOSFET, 500 mA, 60 V Enhancement, 3-Pin TO-92

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Subtotal (1000 units, in bags of 1000)*

$236.00

(exc. GST)

$271.00

(inc. GST)

Spend over $80.00 ex GST for FREE delivery

Temporarily out of stock

10,000 unit(s) shipping from 17 March 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Bag*
1000 - 1000	$0.236	$236.00
2000 - 9000	$0.232	$232.00
10000 +	$0.209	$209.00

*price indicative

Alternative

This product is not currently available. Here is our alternative recommendation.

onsemi BS170 N-Channel MOSFET, 500 mA, 60 V Enhancement, 3-Pin TO-92 BS170

RS Stock No.: 671-4736

Each (In a Pack of 10)

$10.43

(exc. GST)

$11.99

(inc. GST)

RS Stock No.:: 124-1745
Mfr. Part No.:: BS170
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	500mA
	Maximum Drain Source Voltage Vds	60V
	Series	BS170
	Package Type	TO-92
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	1.6nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.6V
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Power Dissipation Pd	830mW
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	5.2mm
	Width	4.19mm
	Height	5.33mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 500mA
	Maximum Drain Source Voltage Vds 60V
	Series BS170
	Package Type TO-92
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 1.6nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.6V
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Power Dissipation Pd 830mW
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 5.2mm
	Width 4.19mm
	Height 5.33mm
	Automotive Standard No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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