Infineon HEXFET N-Channel MOSFET, 64 A, 55 V, 3-Pin TO-220 FP IRFI3205PBF

RS Stock No.:: 124-8986
Mfr. Part No.:: IRFI3205PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 64 A, 55 V, 3-Pin TO-220 FP IRFI3205PBF

Bulk discount available

Subtotal (1 tube of 50 units)**

$215.85

(exc. GST)

$248.25

(inc. GST)

Available for back order.*

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Units	Per unit	Per Tube**
50 - 50	$4.317	$215.85
100 - 150	$4.241	$212.05
200 +	$3.663	$183.15

**price indicative

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RS Stock No.:: 124-8986
Mfr. Part No.:: IRFI3205PBF
Brand:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 64A Maximum Continuous Drain Current, 63W Maximum Power Dissipation - IRFI3205PBF

This MOSFET is suited for high-efficiency applications, offering a solution for various electronic and electrical systems. With advanced processing, it is effective in power management and switching tasks, serving as a key component in contemporary designs. Its enhancement mode technology ensures consistent performance across diverse operational conditions.

Features & Benefits

• Continuous drain current capability of 64A supports high-performance applications
• 55V drain-source voltage improves circuit reliability
• Low on-resistance of 8mΩ decreases power loss
• Quick switching speeds enhance efficiency in high-frequency applications
• Maximum power dissipation rated at 63W supports effective thermal management
• TO-220 package design allows straightforward installation in various setups

Applications

• Utilised in power supplies for efficient energy conversion
• Suitable for DC-DC converters managing high currents
• Ideal for motor control requiring rapid switching
• Employed in inverter circuits within renewable energy systems
• Used in electric vehicle power management systems

How does the low on-resistance benefit performance?

The low on-resistance reduces heat loss, increasing efficiency and ensuring more energy is available for the load instead of being wasted as heat.

What is the optimal gate voltage for efficient operation?

An optimal gate voltage of 10V ensures maximum conduction, confirming reliable operation in high current applications.

Can this component handle pulsed currents?

Yes, it is rated for pulsed drain currents up to 390A, making it suitable for transient demand applications.

What temperature range can it operate within?

It functions effectively across a wide temperature range of -55°C to +175°C, accommodating various environmental conditions.

Is this product compatible with standard PCB mounting?

Yes, its TO-220 package design ensures compatibility with conventional through-hole PCB mounting practices.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	64 A
Maximum Drain Source Voltage	55 V
Package Type	TO-220 FP
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	63 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.83mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	170 nC @ 10 V
Length	10.75mm
Number of Elements per Chip	1
Transistor Material	Si
Height	9.8mm
Minimum Operating Temperature	-55 °C