Dual Silicon N-Channel MOSFET, 64 A, 55 V, 3-Pin TO-220 Full-Pak Infineon IRFI3205PBF

RS Stock No.:: 262-6753
Mfr. Part No.:: IRFI3205PBF
Brand:: Infineon

Dual Silicon N-Channel MOSFET, 64 A, 55 V, 3-Pin TO-220 Full-Pak Infineon IRFI3205PBF

Subtotal (1 tube of 2000 units)**

$4,290.00

(exc. GST)

$4,934.00

(inc. GST)

On back order for despatch 13/06/2025, delivery within 7 working days from despatch date.*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over $60 ex GST

Units	Per unit	Per Tube**
2000 +	$2.145	$4,290.00

**price indicative

RS Stock No.:: 262-6753
Mfr. Part No.:: IRFI3205PBF
Brand:: Infineon

Datasheet - IRFI3205PBF

Infineon HEXFET Series MOSFET, 64A Maximum Continuous Drain Current, 63W Maximum Power Dissipation - IRFI3205PBF

This MOSFET is suited for high-efficiency applications, offering a solution for various electronic and electrical systems. With advanced processing, it is effective in power management and switching tasks, serving as a key component in contemporary designs. Its enhancement mode technology ensures consistent performance across diverse operational conditions.

Features & Benefits

• Continuous drain current capability of 64A supports high-performance applications
• 55V drain-source voltage improves circuit reliability
• Low on-resistance of 8mΩ decreases power loss
• Quick switching speeds enhance efficiency in high-frequency applications
• Maximum power dissipation rated at 63W supports effective thermal management
• TO-220 package design allows straightforward installation in various setups

Applications

• Utilised in power supplies for efficient energy conversion
• Suitable for DC-DC converters managing high currents
• Ideal for motor control requiring rapid switching
• Employed in inverter circuits within renewable energy systems
• Used in electric vehicle power management systems

How does the low on-resistance benefit performance?

The low on-resistance reduces heat loss, increasing efficiency and ensuring more energy is available for the load instead of being wasted as heat.

What is the optimal gate voltage for efficient operation?

An optimal gate voltage of 10V ensures maximum conduction, confirming reliable operation in high current applications.

Can this component handle pulsed currents?

Yes, it is rated for pulsed drain currents up to 390A, making it suitable for transient demand applications.

What temperature range can it operate within?

It functions effectively across a wide temperature range of -55°C to +175°C, accommodating various environmental conditions.

Is this product compatible with standard PCB mounting?

Yes, its TO-220 package design ensures compatibility with conventional through-hole PCB mounting practices.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	64 A
Maximum Drain Source Voltage	55 V
Package Type	TO-220 Full-Pak
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Channel Mode	Enhancement
Number of Elements per Chip	2
Transistor Material	Silicon