Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 130-0999P
- Mfr. Part No.:
- IRFS4010TRLPBF
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 200 - 398 | $10.68 |
| 400 + | $10.54 |
*price indicative
- RS Stock No.:
- 130-0999P
- Mfr. Part No.:
- IRFS4010TRLPBF
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 143nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 143nC | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 375W Maximum Power Dissipation - IRFS4010TRLPBF
This high-power MOSFET delivers strong performance across various applications, essential for contemporary electronic systems. Its enhancement mode operation and Advanced HEXFET technology provide efficient power management, making it suitable for applications that require dependable power control.
Features & Benefits
• Supports continuous drain current up to 180A for substantial loads
• Maximum drain-source voltage rated at 100V for flexibility
• Low Rds(on) of 4.7mΩ minimises power loss during operation
• Designed in a single configuration for easier integration
• Handles temperatures up to +175°C effectively
• Capable of high-speed power switching for efficient operations
Applications
• Used in synchronous rectification for switched-mode power supplies
• Suitable for uninterruptible power supply systems
• Applied in hard-switched and high-frequency circuits
• Utilised in automation equipment that needs efficient power management
• Integrates well into diverse electrical and mechanical projects
How does the resistance affect performance in high-frequency applications?
A low Rds(on) notably reduces heat generation and power loss, enhancing the efficiency of high-frequency power converters.
What gate voltage is required to ensure optimal operation?
The device operates effectively with a gate-source voltage between 2V and 4V, with 10V recommended for maximum efficiency.
Is installation straightforward for this component?
Yes, this surface mount MOSFET is designed for easy placement on PCBs, allowing for quick and reliable setups in various devices.
Can it handle thermal management effectively?
With a maximum operating junction temperature of +175°C, it is suitable for use in environments that require solid thermal performance.
What types of circuits can benefit from incorporating this component?
It is Ideal for high-speed switching applications, load driver circuits, and power management systems in automation and electrical fields.
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