Toshiba U-MOSVIII-H Type N-Channel MOSFET, 32 A, 30 V Enhancement, 8-Pin SOP TPH11003NL,LQ(S
- RS Stock No.:
- 133-2808
- Mfr. Part No.:
- TPH11003NL,LQ(S
- Brand:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
$14.11
(exc. GST)
$16.23
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Last RS stock
- Final 70 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | $1.411 | $14.11 |
| 50 - 90 | $1.367 | $13.67 |
| 100 - 490 | $1.327 | $13.27 |
| 500 - 990 | $1.287 | $12.87 |
| 1000 + | $1.249 | $12.49 |
*price indicative
- RS Stock No.:
- 133-2808
- Mfr. Part No.:
- TPH11003NL,LQ(S
- Brand:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOP | |
| Series | U-MOSVIII-H | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 21W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5 mm | |
| Height | 0.95mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOP | ||
Series U-MOSVIII-H | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 21W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5 mm | ||
Height 0.95mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
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