ROHM US6K1 Dual N-Channel MOSFET, 1.5 A, 30 V, 6-Pin SOT-363 US6K1TR

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

30 V

Series

US6K1

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

340 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

1 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

2.1mm

Typical Gate Charge @ Vgs

1.6 nC @ 4.5 V

Width

1.8mm

Forward Diode Voltage

1.2V

Height

0.82mm