N-Channel MOSFET, 12 A, 60 V, 8-Pin HSMT ROHM RQ3L050GNTB
- RS Stock No.:
- 133-3297
- Mfr. Part No.:
- RQ3L050GNTB
- Brand:
- ROHM
On back order for despatch 19/11/2024, delivery within 7 working days from despatch date.
Price (ex. GST) Each (In a Pack of 10)
$1.174
(exc. GST)
$1.35
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | $1.174 | $11.74 |
| 50 - 90 | $1.14 | $11.40 |
| 100 - 490 | $1.107 | $11.07 |
| 500 - 990 | $1.075 | $10.75 |
| 1000 + | $1.043 | $10.43 |
*price indicative
- RS Stock No.:
- 133-3297
- Mfr. Part No.:
- RQ3L050GNTB
- Brand:
- ROHM
Technical data sheets
Legislation and Compliance
Product Details
N-Channel MOSFET Transistors, ROHM
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ROHM Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Voltage | 60 V |
| Series | RQ3L050GN |
| Package Type | HSMT |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 86 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 14.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 3.1mm |
| Typical Gate Charge @ Vgs | 5.3 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Length | 3.3mm |
| Forward Diode Voltage | 1.2V |
| Height | 0.85mm |