Infineon OptiMOS P Type P-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON
- RS Stock No.:
- 165-6578
- Mfr. Part No.:
- BSC060P03NS3EGATMA1
- Brand:
- Infineon
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Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 20000 | $0.918 | $4,590.00 |
| 25000 + | $0.826 | $4,130.00 |
*price indicative
- RS Stock No.:
- 165-6578
- Mfr. Part No.:
- BSC060P03NS3EGATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TDSON | |
| Series | OptiMOS P | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 6.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TDSON | ||
Series OptiMOS P | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 6.35mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC060P03NS3EGATMA1
This MOSFET is a power-switching transistor designed for high-current, low-voltage applications in surface-mount assemblies. It operates across a wide temperature range suitable for demanding environments and delivers substantial continuous current capability while maintaining compact packaging for low-profile board designs.
Features and Benefits:
• 100A continuous drain current enables sustained high-current switching
• 30V drain-source rating supports low-voltage power stages
• 9.6mΩ Rds(on) reduces conduction losses and heat generation
• 83W maximum power dissipation permits significant power handling
• 61nC typical gate charge allows controlled switching dynamics
• 25V gate-source limit secures gate drive headroom for robustness
• 30V drain-source rating supports low-voltage power stages
• 9.6mΩ Rds(on) reduces conduction losses and heat generation
• 83W maximum power dissipation permits significant power handling
• 61nC typical gate charge allows controlled switching dynamics
• 25V gate-source limit secures gate drive headroom for robustness
Applications
• Suitable for synchronous buck converters in power supplies
• Ideal for DC motor drives requiring high current handling
• Used for point-of-load regulators in server and telecom equipment
• Can be used for battery management systems in energy storage
• Suitable for high-current load switches on compact PCBs
• Ideal for DC motor drives requiring high current handling
• Used for point-of-load regulators in server and telecom equipment
• Can be used for battery management systems in energy storage
• Suitable for high-current load switches on compact PCBs
What thermal range can it tolerate during operation?
It is specified to function from -55°C up to 150°C, allowing use in environments with severe temperature variation.
Which package and mounting style does it use for PCB assembly?
The device is supplied in an 8-pin TDSON package designed for surface-mount placement and low-profile assemblies.
Is the channel type and operating mode suitable for common power topologies?
It employs a P-type channel in enhancement mode, appropriate for designs requiring a P-channel device with controlled conduction characteristics.
How compact is the component for tight board layouts?
The package height is 1.1mm and the footprint supports compact placement while maintaining high-current capability.
Related links
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