Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3
- RS Stock No.:
- 165-7249
- Mfr. Part No.:
- SI4178DY-T1-GE3
- Brand:
- Vishay
This image is representative of the product range
Subtotal (1 reel of 2500 units)*
$1,440.00
(exc. GST)
$1,655.00
(inc. GST)
Spend over $80.00 ex GST for FREE delivery
- Shipping from 21 December 2026
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | $0.576 | $1,440.00 |
| 5000 - 7500 | $0.561 | $1,402.50 |
| 10000 + | $0.553 | $1,382.50 |
*price indicative
- RS Stock No.:
- 165-7249
- Mfr. Part No.:
- SI4178DY-T1-GE3
- Brand:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | Si4178DY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.85V | |
| Maximum Power Dissipation Pd | 5W | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Standards/Approvals | RoHS | |
| Height | 1.55mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series Si4178DY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.85V | ||
Maximum Power Dissipation Pd 5W | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Standards/Approvals RoHS | ||
Height 1.55mm | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Si4178DY Series MOSFET, 30V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SI4178DY-T1-GE3
Features and Benefits:
• 12A continuous current supports high-current load control
• 33mΩ Rds(on) reduces conduction losses in power paths
• 7.5nC typical gate charge allows fast gate transitions
• 5W power dissipation helps manage thermal load in small packages
Applications
• Ideal for battery management and power distribution
• Used with motor drivers for compact actuators
• Can be used for load switching in telecom equipment
What gate voltage limitations must designers observe?
How does thermal performance influence PCB layout decisions?
What ambient temperature range can it operate within?
What package and mounting considerations affect assembly?
Related links
- Vishay Si4178DY Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC
- Vishay ThunderFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- Vishay Si4134DY Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- Vishay ThunderFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
