N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220 Infineon IPP023N10N5AKSA1
- RS Stock No.:
- 166-0985
- Mfr. Part No.:
- IPP023N10N5AKSA1
- Brand:
- Infineon
Available for back order.
Price (ex. GST) Each (In a Tube of 50)
$10.738
(exc. GST)
$12.349
(inc. GST)
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | $10.738 | $536.90 |
| 250 + | $9.664 | $483.20 |
*price indicative
- RS Stock No.:
- 166-0985
- Mfr. Part No.:
- IPP023N10N5AKSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
RoHS Status: Exempt
- COO (Country of Origin):
- MY
Product Details
Infineon OptiMOS™5 Power MOSFETs
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 120 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-220 |
| Series | OptiMOS™ 5 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.8V |
| Minimum Gate Threshold Voltage | 2.2V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4.57mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 168 nC @ 10 V |
| Length | 10.36mm |
| Transistor Material | Si |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Height | 15.95mm |