IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 420 A, 100 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

$491.61

(exc. GST)

$565.35

(inc. GST)

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In Stock
  • 10 unit(s) ready to ship from another location
  • Plus 70 unit(s) shipping from 30 January 2026
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Units
Per unit
Per Tube*
10 - 40$49.161$491.61
50 +$44.244$442.44

*price indicative

RS Stock No.:
168-4579
Mfr. Part No.:
IXFN420N10T
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

420A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

GigaMOS Trench HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

670nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.07kW

Maximum Operating Temperature

175°C

Length

38.23mm

Height

9.6mm

Width

25.07 mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


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