IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

$791.09

(exc. GST)

$909.75

(inc. GST)

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  • 60 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
10 - 10$79.109$791.09
20 - 30$77.129$771.29
40 +$75.943$759.43

*price indicative

RS Stock No.:
168-4578
Mfr. Part No.:
IXFN360N15T2
Brand:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

310A

Maximum Drain Source Voltage Vds

150V

Series

GigaMOS TrenchT2 HiperFET

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

715nC

Maximum Power Dissipation Pd

1.07kW

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

9.6mm

Length

38.23mm

Automotive Standard

No

COO (Country of Origin):
PH

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