IXYS Single HiperFET, Q3-Class 1 N-Channel MOSFET, 82 A, 600 V Enhancement, 3-Pin PLUS264 IXFB82N60Q3

RS Stock No.:: 168-4696
Mfr. Part No.:: IXFB82N60Q3
Brand:: IXYS

IXYS Single HiperFET, Q3-Class 1 N-Channel MOSFET, 82 A, 600 V Enhancement, 3-Pin PLUS264 IXFB82N60Q3

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Subtotal (1 tube of 25 units)*

$1,603.88

(exc. GST)

$1,844.45

(inc. GST)

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Shipping from 26 August 2027

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Units	Per unit	Per Tube*
25 - 100	$64.155	$1,603.88
125 +	$57.74	$1,443.50

*price indicative

RS Stock No.:: 168-4696
Mfr. Part No.:: IXFB82N60Q3
Brand:: IXYS

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	IXYS
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	82A
	Maximum Drain Source Voltage Vds	600V
	Series	HiperFET, Q3-Class
	Package Type	PLUS264
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	75mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.56kW
	Maximum Gate Source Voltage Vgs	-30V, +30V
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Length	20.29mm
	Width	5.31mm
	Height	26.59mm
	Number of Elements per Chip	1

	Select all
	Brand IXYS
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 82A
	Maximum Drain Source Voltage Vds 600V
	Series HiperFET, Q3-Class
	Package Type PLUS264
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 75mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.56kW
	Maximum Gate Source Voltage Vgs -30V, +30V
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Length 20.29mm
	Width 5.31mm
	Height 26.59mm
	Number of Elements per Chip 1

COO (Country of Origin):: US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density