N-Channel MOSFET, 4.8 A, 550 V, 3-Pin SOT-223 Infineon IPN50R1K4CEATMA1
- RS Stock No.:
- 168-5922
- Mfr. Part No.:
- IPN50R1K4CEATMA1
- Brand:
- Infineon
3000 In stock for delivery within 7 working day(s)
Price (ex. GST) Each (On a Reel of 3000)
$0.35
(exc. GST)
$0.40
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 12000 | $0.35 | $1,050.00 |
| 15000 + | $0.315 | $945.00 |
*price indicative
- RS Stock No.:
- 168-5922
- Mfr. Part No.:
- IPN50R1K4CEATMA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Infineon CoolMOS™ CE Power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4.8 A |
| Maximum Drain Source Voltage | 550 V |
| Package Type | SOT-223 |
| Series | CoolMOS™ CE |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.4 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 5 W |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Width | 3.7mm |
| Typical Gate Charge @ Vgs | 8.2 nC @ 10 V |
| Length | 6.7mm |
| Forward Diode Voltage | 0.83V |
| Height | 1.7mm |
| Minimum Operating Temperature | -40 °C |