Infineon Dual IRF7343PbF 1 Type P, Type N-Channel MOSFET, 4.7 A, 55 V Depletion, 8-Pin SO-8

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 4000 units)*

$2,816.00

(exc. GST)

$3,240.00

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 26 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
4000 - 16000$0.704$2,816.00
20000 +$0.634$2,536.00

*price indicative

RS Stock No.:
170-2265
Mfr. Part No.:
IRF7343TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

55V

Series

IRF7343PbF

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

170mΩ

Channel Mode

Depletion

Typical Gate Charge Qg @ Vgs

24nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.96V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2W

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Height

1.5mm

Standards/Approvals

No

Width

4 mm

Length

5mm

Number of Elements per Chip

1

Automotive Standard

No

Non Compliant

The Infineon IRF7343 is the 55V dual N- and P- channel HEXFET power MOSFET in a SO-8 package.

RoHS Compliant

Low RDS(on)

Dynamic dv/dt rating

Fast switching

Related links